This brings us to Samsung's announcement of the 512GB eUFS chip that should provide "unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets". Samsung is now manufacturing 512GB internal storage chips for smartphones, and your next flagship purchase could feature one of these babies. Imagine pairing a ton of storage alongside Qualcomm's Snapdragon 845 system-on-chip (SoC), or Samsung's recently announced Exynos 9810 (Samsung typically uses two SoCs for its flagship phones, tapping its own silicon for models that ship internationally and Qualcomm's hardware for United States variants).
The 64-layer 512Gb V-NAND's advanced circuit design and new power management technology will potentially help the Galaxy S9 to exhibit better battery life. This is 10 times more than what a 64GB phone is capable of storing. While the company's press release does not specifically mention which version of the UFS interface had been implemented, Samsung did state that the storage package could attain "sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively" putting it very much in the ballpark of UFS 2.0. That's eight times faster than a typical microSD card. According to the company, this is expected to meet the increase in demand for embedded mobile storage, SSDs, and removable memory cards with high density and performance. This kind of speed means that users should have seamless multimedia experiences on their mobile devices.
Samsung says that it has introduced a new set of proprietary technologies to maximize performance and energy efficiency.
Do you think the Galaxy S9 will be able to tout 512GB of internal storage?
Finally, Samsung noted that it intends to "steadily" increase production volume for its 64-layer 512Gb V-NAND chips, while continuing to expand its 256Gb V-NAND production.